FQD1N80(2001) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQD1N80 Datasheet PDF : 9 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
100
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
50
40
V = 10V
GS
30
VGS = 20V
20
10
※ Note : T = 25℃
J
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
250
200
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
iss
150
C
oss
100
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
50
C
rss
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
100
150oC
10-1
2
25oC
-55oC
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 160V
10
DS
V = 400V
DS
8
V = 640V
DS
6
4
2
※ Note : ID = 1.0 A
0
0
1
2
3
4
5
6
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1. May 2001
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