PDTC144V View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PDTC144V Datasheet PDF : 11 Pages
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NXP Semiconductors
PDTC144V series
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ
103
hFE
102
10
006aaa099
(2) (1)
(3)
1
VCEsat
(V)
10−1
006aaa100
(1)
(2)
(3)
1
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
10
006aaa101
VI(on)
(1)
(V)
(2)
(3)
10−2
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
10
006aaa102
VI(off)
(1)
(V)
(2)
(3)
1
10−1
1
10
102
IC (mA)
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
1
10−1
1
10
IC (mA)
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PDTC144V_SER_4
Product data sheet
Rev. 04 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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