HYB39S256400T-10 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

HYB39S256400T-10

256 MBit Synchronous DRAM

Infineon Technologies 

HYB 39S256400/800/160T

256 MBit Synchronous DRAM

Column

Address Counter

Column Addresses

A0 - A9, A11, AP

BA0, BA1

Column

Address Buffer

Row Addresses

A0 - A12,

BA0, BA1

Row Address

Buffer

Refresh

Counter

Row

Decoder

Memory

Array

Bank 0

8196 x

2048 x

4 Bit

Row

Decoder

Memory

Array

Bank 1

8196 x

2048 x

4 Bit

Row

Decoder

Memory

Array

Bank 2

8196 x

2048 x

4 Bit

Row

Decoder

Memory

Array

Bank 3

8196 x

2048 x

4 Bit

Input Buffer Output Buffer

DQ0 - DQ3

Control Logic & Timing Generator

*) on SSTL versions only

CLK CKE CS RAS CAS WE DQM VREF*)

SPB03781

Block Diagram for 64 M × 4 SDRAM (13/11/2 addressing)

Semiconductor Group

4

1998-10-01

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