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HYB39S256400T-10 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
HYB39S256400T-10
Infineon
Infineon Technologies Infineon
HYB39S256400T-10 Datasheet PDF : 56 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
HYB 39S256400/800/160T
256 MBit Synchronous DRAM
Column
Address Counter
Column Addresses
A0 - A8, AP,
BA0, BA1
Column
Address Buffer
Row Addresses
A0 - A12,
BA0, BA1
Row Address
Buffer
Refresh
Counter
Row
Decoder
Memory
Array
Bank 0
8192 x
512 x
16 Bit
Row
Decoder
Memory
Array
Bank 1
8192 x
512 x
16 Bit
Row
Decoder
Memory
Array
Bank 2
8192 x
512 x
16 Bit
Row
Decoder
Memory
Array
Bank 3
8192 x
512 x
16 Bit
*) on SSTL versions only
Input Buffer Output Buffer
DQ0 - DQ15
Control Logic & Timing Generator
CLK CKE CS RAS CAS WE DQMU DQML VREF *)
SPB03779
Block Diagram for 16 M × 16 SDRAM (13/9/2 addressing)
Semiconductor Group
6
1998-10-01

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