BD545 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BD545 Datasheet PDF : 2 Pages
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electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BD545
40
Collector-emitter
(BR)CEO breakdown voltage
f»-
-•
SS
60
80
Collector-emitter
ces cut-off current
'""**«
VCE= 40V
VCE = 60V
VCE= 80V
VCE=100V
VBE = 0
VBE = 0
VBE = °
VBE = 0
BD54SC
BD545
BD545A
BD545B
BD545C
100
0.4
0.4
0.4
0.4
Collector cut-off
VCE= 30V
I8 = 0
BD545/545A
0.7
'CEO current
VCE= 60V
IB = 0
BD545B/545C
0.7
Emitter cut-off
'EBO current
VEB= SV
lc = 0
1
Forward current
hpF transfer ratio
VCE= 4V
VCE= 4V
VCE= 4V
lc= 1A
lc= 5 A
lc= 10A
60
(see Notes 4 and 5) 25
10
Collector-emitter
IB = 625mA
lc= 5 A
, k, 4 „ JC,
0.8
CE(S3t) saturation voltage
• B = 2A
IC=10A
(see Notes 4 and 5)
1
Base-emitter
VCE= 4V
lc= 10A
(see Notes 4 and 5)
1.8
BE voltage
Small signal forward
VCE= 10V
IC = 0.5A
f=1kHz
20
16 current transfer ratio
Small signal forward
VCE= 10V
IC = 0.5A
f=1MHz
3
current transfer ratio
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 us, duty cycle • 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
Rejo
ROJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.47 'CAW
35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
ton Turn-on time
t0(f Turn-off time
IC = 6 A
VBE(oft) = -4V
TEST CONDITIONS *
lB(on) = 0.6A
RL = 50
lB(0ff) = -0.6A
tp = 20 us, dc •_ 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.6
MS
1
us
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