IRF624 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
IRF624 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
Drain-Source
Voltage
Breakdown VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 1.4A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current VDS= 250V; VGS=0
VSD
Forward On-Voltage
IS= 3.8A; VGS=0
Ciss Input Capacitance
Coss Output Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
Crss Reverse Transfer Capacitance
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
VDD=125V,ID=3.8A
RG=18Ω
Tf
Fall Time
isc Product Specification
IRF624
MIN TYP
MAX UNIT
275
V
2
4
V
1.1
Ω
±500 nA
250
uA
1.8
V
340
pF
110
pF
32
pF
MIN
TYP MAX UNIT
11
17
ns
24
36
ns
21
32
ns
13
20
ns
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