HM62W8511CJP10 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

HM62W8511CJP10

4M High Speed SRAM (512-kword × 8-bit)

Renesas Electronics 

HM62W8511HC Series

DC Characteristics

(Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0V)

Parameter

Symbol Min

Input leakage current

II I

—

LI

Output leakage current

IILOI

—

Operation power supply current 10ns cycle ICC

—

Typ*1 Max Unit

— 2 µA

— 2 µA

— 115 mA

12 ns cycle ICC

Standby power supply current

I

SB

— — 100 mA

— — 40 mA

ISB1

— 2.5 5 mA

—*2 0.5 1.0*2 mA

Output voltage

VOL

— — 0.4 V

VOH

2.4 — — V

Notes: 1. Typical values are at VCC = 3.3 V, Ta = +25°C and not guaranteed.

2. This characteristics is guaranteed only for L-version.

Test conditions

Vin = V to V

SS

CC

Vin = VSS to VCC

Min cycle

CS = V , lout = 0 mA

IL

Other inputs = VIH/VIL

Min cycle

CS = VIH,

Other inputs = V /V

IH IL

f = 0 MHz

VCC ≥ CS ≥ VCC - 0.2 V,

(1) 0 V ≤ Vin ≤ 0.2 V or

(2)

V

CC

≥

Vin

≥

V

CC

-

0.2

V

IOL = 8 mA

IOH = –4 mA

Capacitance

(Ta = +25°C, f = 1.0 MHz)

Parameter

Symbol Min

Typ

Max

Input capacitance*1

Cin

—

—

6

Input/output capacitance*1

CI/O

—

—

8

Note: 1. This parameter is sampled and not 100% tested.

Unit

pF

pF

Test conditions

Vin = 0 V

VI/O = 0 V

Rev. 2, Nov. 2001, page 6 of 14

Share Link: