ILD3 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

ILD3

Phototransistor Optocoupler

Infineon Technologies 

Characteristics

Emitter (IR GaAs)

Symbol

Forward Voltage

Reverse Current

Capacitance

Thermal Resistance, Junction to Lead

Detector

VF

IR

C0

RTHJL

Collector-Emitter Leakage Current

ICEO

Capacitance

CCE

Thermal Resistance, Junction to Lead

RTHJL

Package Transfer Characteristics (Each Channel)

Saturated Current Transfer Ratio, ILD/Q3-1

Saturated Current Transfer Ratio, ILD/Q3-2

Common Mode Rejection Output High

CTR SAT

CTR SAT

CMH

Min.

—

—

—

—

—

—

—

300

100

—

Typ.

1.25

0.01

25

750

Max. Unit

1.65 V

10

µA

—

pF

—

K/W

5.0

70

nA

6.8

—

pF

500

—

K/W

—

—

—

—

5000 —

%

%

V/µs

Common Mode Rejection Output Low

CML

—

5000 —

V/µs

Common Mode Coupling Capacitance

Package Capacitance

CCM

—

0.01 —

pF

CIO

—

0.8

—

pF

Test Condition

IF=60 mA

VR=6.0 V

VR=0 V, f=1.0 MHz

—

VCE=15 V

VCE=5.0 V, f=1.0 MHz

—

IF=1.6 mA, VCE=0.4 V

IF=1.0 mA, VCE=0.4 V

VCM=50 VP-P, RL=10 kΩ,

IF=0 mA

VCM=50 VP-P, RL=10 kΩ,

IF=0 mA

—

VIO=0 V, f=1.0 MHz

 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–178

ILD/Q3

March 8, 2000-01

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