PUMD2(1999) View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

PUMD2
(Rev.:1999)

NPN/PNP resistor-equipped transistors

Philips Electronics 

Philips Semiconductors

NPN/PNP resistor-equipped transistors

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

Per transistor; for the PNP transistor with negative polarity

VCBO

VCEO

VEBO

VI

collector-base voltage

collector-emitter voltage

emitter-base voltage

input voltage

positive

open emitter

open base

open collector

negative

IO

ICM

Ptot

Tstg

Tj

Tamb

output current (DC)

peak collector current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

Tamb ≤ 25 °C; note 1

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

Note

1. Device mounted on an FR4 printed-circuit board.

Product specification

PUMD2

MIN.

MAX.

UNIT

−

50

V

−

50

V

−

10

V

−

+40

V

−

−10

V

−

100

mA

−

100

mA

−

200

mW

−65

+150

°C

−

150

°C

−65

+150

°C

−

300

mW

1999 May 21

3

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