Philips Semiconductors
NPN/PNP resistor-equipped transistors
Product specification
PUMD2
103
handbook, halfpage
hFE
102
10
MBK790
(1)
(2)
(3)
−1
handbook, halfpage
VCEsat
(V)
−10−1
MBK789
(1)
(2)
(3)
1
−10−1
−1
−10
−102
IC (mA)
TR2 (PNP); VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.7 DC current gain as a function of collector
current; typical values.
−10−−210−1
−1
−10
−102
IC (mA)
TR2 (PNP); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
handbook, halfpage
Vi(off)
(V)
(1)
−1
(2)
(3)
MBK792
−102
handbook, halfpage
Vi(on)
(V)
−10
−1
MBK791
(1)
(2)
(3)
−10−−110−2
−10−1
−1
−10
IC (mA)
TR2 (PNP); VCE = −5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.9 Input-off voltage as a function of collector
current; typical values.
−10−1
−10−1
−1
−10
−102
IC (mA)
TR2 (PNP); VCE = −0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.10 Input-on voltage as a function of collector
current; typical values.
1999 May 21
6