Philips Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
Product specification
PEMD2; PIMD2; PUMD2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
open emitter
open base
open collector
negative
VI
input voltage TR2
positive
negative
IO
output current (DC)
ICM
peak collector current
Ptot
total power dissipation
SOT363
Tamb ≤ 25 °C
note 1
SOT457
note 1
SOT666
notes 1 and 2
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
Per device
Ptot
total power dissipation
SOT363
Tamb ≤ 25 °C
note 1
SOT457
note 1
SOT666
notes 1 and 2
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
MIN.
MAX.
UNIT
−
50
V
−
50
V
−
10
V
−
+40
V
−
−10
V
−
+10
V
−
−40
V
−
100
mA
−
100
mA
−
200
mW
−
300
mW
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C
−
300
mW
−
600
mW
−
300
mW
2004 Apr 21
4