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Part Name
Description
NE68030-A View Datasheet(PDF) - California Eastern Laboratories.
Part Name
Description
Manufacturer
NE68030-A
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
California Eastern Laboratories.
NE68030-A Datasheet PDF : 6 Pages
1
2
3
4
5
6
INSERTION POWER GAIN
vs. FREQUENCY
25
V
CE
= 3 V
I
C
= 5 mA
20
15
10
5
0
0.1 0.2
0.5
1
2
5
Frequency f (GHz)
NOISE FIGURE vs.
COLLECTOR CURRENT
5
V
CE
= 3 V
f = 2 GHz
4
3
2
1
0
0.5 1
5 10
50
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
S-PARAMETERS
NE68030 / 2SC4228
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
12
V
CE
= 3 V
f = 2 GHz
8
4
0
0.5 1
5 10
50
Collector Current I
C
(mA)
4
Data Sheet PU10452EJ01V0DS
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