MGSF3442VT1 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MGSF3442VT1 Datasheet PDF : 8 Pages
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MGSF3442VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20
0.20
TJ = 150°C
ID = 4.0 A
TJ = 25°C
10
0.16
0.12
0.08
0.04
1.0
0
0
0.25
0.50
0.75
1.00
1.25 1.50
0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
2.0
4.0
6.0
8.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 7. Source−Drain Diode Forward Voltage
Figure 8. On−Resistance versus
Gate−to−Source Voltage
0.2
0.1
0
ID = 250 mA
−0.1
−0.2
−0.3
−0.4
−50 −25
0 25 50 75 100 125 150
TJ, TEMPERATURE (°C)
Figure 9. Threshold Voltage
20
16
12
8.0
4.0
0
0.01
0.1
1.0
10
TIME (sec)
Figure 10. Single Pulse Power
2.0
1.0
DUTY CYCLE = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.0001
SINGLE PULSE
NOTES:
PDM
t1
t2
1. DUTY CYCLE, D = t1/t2
2. PER UNIT BASE =
2. RthJA = 62.5°C/W
3. TJM − TA = PDMZthJA(t)
4. SURFACE MOUNTED
0.001
0.01
0.1
1.0
SQUARE WAVE PULSE DURATION (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction−to−Ambient
10
30
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