MGP7N60E View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MGP7N60E

Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

ON Semiconductor 

MGP7N60E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–to–Emitter Breakdown Voltage

(VGE = 0 Vdc, IC = 25 µAdc)

Temperature Coefficient (Positive)

V(BR)CES

600

—

—

870

Vdc

—

—

mV/°C

Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)

Zero Gate Voltage Collector Current

(VCE = 600 Vdc, VGE = 0 Vdc)

(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)

ON CHARACTERISTICS (1)

Collector–to–Emitter On–State Voltage

(VGE = 15 Vdc, IC = 2.5 Adc)

(VGE = 15 Vdc, IC = 2.5 Adc, TJ = 125°C)

(VGE = 15 Vdc, IC = 5.0 Adc)

Gate Threshold Voltage

(VCE = VGE, IC = 1.0 mAdc)

Threshold Temperature Coefficient (Negative)

V(BR)ECS

15

ICES

—

—

IGES

—

—

—

Vdc

µAdc

—

10

—

200

—

50

mAdc

VCE(on)

Vdc

—

1.6

1.9

—

1.5

—

—

2.0

2.4

VGE(th)

Vdc

4.0

6.0

8.0

—

10

—

mV/°C

Forward Transconductance (VCE = 10 Vdc, IC = 5.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VCE = 25 Vdc, VGE = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (1)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VCC = 360 Vdc, IC = 5.0 Adc,

VGE = 15 Vdc, L = 300 mH,

RG = 20 Ω)

Energy losses include “tail”

Turn–Off Switching Loss

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VCC = 360 Vdc, IC = 5.0 Adc,

VGE = 15 Vdc, L = 300 mH,

RG = 20 Ω, TJ = 125°C)

Energy losses include “tail”

Turn–Off Switching Loss

Gate Charge

(VCC = 360 Vdc, IC = 5.0 Adc,

VGE = 15 Vdc)

INTERNAL PACKAGE INDUCTANCE

Internal Emitter Inductance

(Measured from the emitter lead 0.25″ from package to emitter bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

gfe

Cies

Coes

Cres

td(on)

tr

td(off)

tf

Eoff

td(on)

tr

td(off)

tf

Eoff

QT

Q1

Q2

LE

—

2.5

—

Mhos

—

610

—

pF

—

60

—

—

10

—

—

22

—

ns

—

24

—

—

64

—

—

196

—

—

0.20

0.34

mJ

—

31

—

ns

—

24

—

—

195

—

—

220

—

—

0.35

—

mJ

—

27.2

—

nC

—

7.0

—

—

13.7

—

nH

—

7.5

—

2

Motorola IGBT Device Data

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