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MGSF1N03LT1 View Datasheet(PDF) - Motorola => Freescale

Part Name
Description
Manufacturer
MGSF1N03LT1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
MGSF1N03LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µAdc)
V(BR)DSS
30
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IGSS
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
1.0
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
rDS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
Ciss
Coss
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDG = 5.0 Vdc)
Crss
Turn–On Delay Time
td(on)
Rise Time
Turn–Off Delay Time
(VDD = 15 Vdc, ID = 1.0 Adc,
RL = 50 )
tr
td(off)
Fall Time
tf
Gate Charge (See Figure 6)
QT
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
Pulsed Current
ISM
Forward Voltage(2)
VSD
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
2.5
VDS = 10 V
2
2.5
VGS = 3.75 V
2
Typ
Max
Unit
Vdc
µAdc
1.0
10
±100
nAdc
1.7
2.4
Vdc
0.08
0.125
0.09
0.135
Ohms
100
pF
90
40
2.5
ns
1.0
16
8.0
6000
pC
0.6
A
0.75
0.8
V
3.5 V
1.5
1
– 55°C
TJ = 150°C
0.5
25°C
0
1
1.5
2
2.5
3
3.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
1.5
3.25 V
1
3.0 V
0.5
2.75 V
2.5 V
0
0
2
4
6
8
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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