MGSF1N03LT3G View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MGSF1N03LT3G Datasheet PDF : 6 Pages
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MGSF1N03L, MVGSF1N03L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mAdc)
V(BR)DSS
30
−
−
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IDSS
−
−
IGSS
−
mAdc
−
1.0
−
10
−
±100
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 1.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
rDS(on)
W
−
0.08
0.10
−
0.125
0.145
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 Vdc)
Ciss
−
140
−
pF
Output Capacitance
Transfer Capacitance
(VDS = 5.0 Vdc)
(VDG = 5.0 Vdc)
Coss
Crss
−
100
−
−
40
−
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 1.0 Adc,
RL = 50 W)
Fall Time
td(on)
−
2.5
−
ns
tr
−
1.0
−
td(off)
−
16
−
tf
−
8.0
−
Gate Charge (See Figure 6)
QT
−
6000
−
pC
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
−
−
0.6
A
Pulsed Current
ISM
−
−
0.75
Forward Voltage (Note 5)
VSD
−
0.8
−
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
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