ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)
IGES
—
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
ICES
—
TJ = 125°C
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
VGE(th)
4.0
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)
V(BR)CES
600
Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)
VCE(SAT)
—
TJ = 125°C
—
Diode Forward Voltage (IF = IFmax, VGE = 0 V)
TJ = 125°C
VF
—
—
Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 Mhz)
Cies
10A60
—
20A60
—
Input Gate Charge (VCE = 300 V, IC = ICmax, VGE = 15 V)
QT
10A60
—
20A60
—
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C)
Recommended Gate Resistor
Turn–On
Turn–Off
10A60
RG(on)
—
20A60
—
RG(off)
—
Turn-On Delay Time
td(on)
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
—
20A60
—
Rise Time
tr
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
—
20A60
—
Turn–Off Delay Time
td(off)
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
—
Fall Time
tf
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
—
Turn-On Energy
E(on)
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
—
20A60
—
Turn-Off Energy
E(off)
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
—
20A60
—
Diode Reverse Recovery Time
(IF = IFmax, V = 300 V, RG as specified)
trr
—
Peak Reverse Recovery Current
Irrm
(IF = IFmax, V = 300 V, RG as specified)
10A60
—
20A60
—
Diode Stored Charge
Qrr
(IF = IFmax, V = 300 V, RG as specified)
10A60
—
20A60
—
Typ
—
6.0
2000
6.0
—
2.35
2.31
1.23
1.12
2300
4400
75
135
180
47
20
375
215
160
125
219
210
0.85
1.6
0.13
0.3
150
6.8
12
560
1060
Max
Unit
± 20
µA
100
µA
8.0
V
—
V
3.5
V
—
2.0
V
—
pF
—
—
nC
—
—
W
—
—
—
ns
—
—
ns
—
—
—
ns
500
ns
mJ
1.0
2.0
mJ
1.0
2.0
ns
—
A
—
—
nC
—
—
MHPM6B10A60D MHPM6B20A60D
2
MOTOROLA