MMSF2P02ER2 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MMSF2P02ER2

Power MOSFET 2 Amps, 20 Volts

ON Semiconductor 

MMSF2P02E

250

ID = 6 A

200

150

100

50

0

25

50

75

100

125

150

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 13. Maximum Avalanche Energy versus

Starting Junction Temperature

Although many E−FETs can withstand the stress of

drain−to−source avalanche at currents up to rated pulsed

current (IDM), the energy rating is specified at rated

continuous current (ID), in accordance with industry

custom. The energy rating must be derated for temperature

as shown in the accompanying graph (Figure 13). Maximum

energy at currents below rated continuous ID can safely be

assumed to equal the values indicated.

10

1

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

0.001

1.0E−05

SINGLE PULSE

1.0E−04

1.0E−03

Normalized to θja at 10s.

Chip 0.0022 Ω 0.0210 Ω 0.2587 Ω 0.7023 Ω 0.6863 Ω

0.0020 F 0.0207 F

0.3517 F 3.1413 F

108.44 F Ambient

1.0E−02

1.0E−01

t, TIME (s)

1.0E+00

Figure 14. Thermal Response

1.0E+01

1.0E+02

1.0E+03

IS

tp

di/dt

trr

ta

tb

0.25 IS

IS

TIME

Figure 15. Diode Reverse Recovery Waveform

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