NDS356AP View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
NDS356AP Datasheet PDF : 6 Pages
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Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = -250 µA
VDS = -24 V, VGS = 0 V
IGSSF
Gate - Body Leakage, Forward
IGSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
VGS = 20 V, VDS = 0 V
VGS = -20V, VDS = 0 V
VDS = VGS, ID = -250 µA
VGS = -4.5 V, ID = -1.1 A
ID(ON)
On-State Drain Current
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VGS = -10 V, ID = -1.3 A
VGS = -4.5 V, VDS = -5 V
VDS = -5 V, ID = -1.1 A
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
VDD = -10 V, ID = -1 A,
VGS = -10 V, RGEN = 50 Ω
VDS = -10 V, ID = -1.1 A,
VGS = -5 V
Min Typ Max Units
-30
TJ =55°C
V
-1
µA
-10
µA
100 nA
-100 nA
-0.8 -1.6 -2.5
V
TJ =125°C -0.5 -1.3 -2.2
0.25 0.3
Ω
TJ =125°C
0.35 0.4
0.14 0.2
-3
A
2
S
280
pF
170
pF
65
pF
8
15
ns
17
30
ns
53
90
ns
38
80
ns
3.4
4.4
nC
0.7
nC
1.5
nC
NDS356AP Rev.C1
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