PDTA123T View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PDTA123T Datasheet PDF : 10 Pages
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Philips Semiconductors
PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = −50 V; IE = 0 A
current
ICEO
collector-emitter cut-off VCE = −30 V; IB = 0 A
current
VCE = −30 V; IB = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off
VEB = −5 V; IC = 0 A
current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = −5 V; IC = −20 mA
IC = −10 mA; IB = −0.5 mA
R1
bias resistor 1 (input)
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
−100 nA
-
-
−1 µA
-
-
−50 µA
-
-
−100 nA
30 -
-
-
-
−150 mV
1.54 2.2
-
-
2.86 kΩ
3
pF
500
hFE
400
(1)
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300
(2)
200
(3)
100
0
−10−1
−1
−10
−102
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−1
VCEsat
(V)
−10−1
(1)
(2)
(3)
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−10−2
−10−1
−1
−10
−102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PDTA123T_SER_1
Product data sheet
Rev. 01 — 7 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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