PEMD10 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMD10 Datasheet PDF : 17 Pages
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NXP Semiconductors
PEMD10; PUMD10
NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Per transistor; for the PNP transistor (TR2) with negative polarity
ICBO
collector-base
VCB = 50 V; IE = 0 A
-
cut-off current
ICEO
collector-emitter
VCE = 30 V; IB = 0 A
-
cut-off current
VCE = 30 V; IB = 0 A;
-
Tj = 150 C
IEBO
emitter-base
VEB = 5 V; IC = 0 A
-
cut-off current
hFE
DC current gain
VCE = 5 V; IC = 10 mA
100
VCEsat collector-emitter
IC = 5 mA; IB = 0.25 mA
-
saturation voltage
VI(off)
off-state input
VCE = 5 V; IC = 100 A
-
voltage
VI(on)
on-state input
VCE = 0.3 V; IC = 5 mA
1.1
voltage
R1
bias resistor 1 (input)
1.54
R2/R1 bias resistor ratio
17
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
TR1 (NPN)
-
TR2 (PNP)
-
fT
transition frequency VCB = 5 V; IC = 10 mA;
[1]
f = 100 MHz
TR1 (NPN)
-
TR2 (PNP)
-
Typ
-
-
-
-
-
-
0.6
0.75
2.20
21
-
-
230
180
Max
100
100
5
180
-
100
0.5
-
2.86
26
2.5
3
-
-
Unit
nA
nA
A
A
mV
V
V
k
pF
pF
MHz
MHz
[1] Characteristics of built-in transistor.
PEMD10_PUMD10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 4 January 2012
© NXP B.V. 2012. All rights reserved.
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