PEMD10 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMD10 Datasheet PDF : 17 Pages
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NXP Semiconductors
3
Cc
(pF)
2
1
PEMD10; PUMD10
NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
006aac813
103
fT
(MHz)
102
006aac757
0
0
10
20
30
40
50
VCB (V)
10
10-1
1
10
102
IC (mA)
Fig 8.
f = 1 MHz; Tamb = 25 C
TR1 (NPN): Collector capacitance as a function
of collector-base voltage; typical values
Fig 9.
VCE = 5 V; Tamb = 25 C
TR1 (NPN): Transition frequency as a function
of collector current; typical values of built-in
transistor
103
hFE
102
006aac814
(1)
(2)
(3)
-1
VCEsat
(V)
006aac815
-10-1
(1)
10
(2)
(3)
1
-10-1
-1
-10
-102
IC (mA)
VCE = 5 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 10. TR2 (PNP): DC current gain as a function of
collector current; typical values
-10-2
-10-1
-1
-10
-102
IC (mA)
IC/IB = 20
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 11. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
PEMD10_PUMD10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 4 January 2012
© NXP B.V. 2012. All rights reserved.
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