2SA908 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SA908 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage IC=-10A;IB=-1A
ICBO Collector Cutoff Current
VCB=-150V; IE=0
IEBO
Emitter Cutoff Current
VEB= -6V; lc= 0
hFE
DC Current Gain
lc= -5A; VCE= -4V
fy
Current-Gain—Bandwidth Product
lE=0.5A;VcE=-12V
2SA908
MIN TYP. MAX UNIT
-150
V
-3.0
V
-1.0 mA
-1.0 mA
30
10
MHz
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