2SB762 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

2SB762

Silicon PNP Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

\P\oducti,U na.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SB762

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

: V(BR)CEo= -60V(Min)

• Good Linearity of hFE

• Wide Area of Safe Operation

• Complement to Type 2SD857

APPLICATIONS

• Designed for AF power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25t)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-60

V

VCEO Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

-4

A

ICM

Collector Current-Peak

Collector Power Dissipation

PC

@TC=25'C

Tj

Junction Temperature

-8

A

40

W

150

•c

Tstg

Storage Temperature Range

-55-150

•c

(pvu

.

'

*• J

-^3

PIH: 1 Base

2 Collector

3 Emitter

TO-2ZOC package

- 8H

u11i ±efl{ -. v *) /-F

A

I-1

¥T

* H ' -\ -•• «-L

-U *S

f 1 lv-D

j -H G h

•j *|*

tn 1

T

mm

DIM WIN MAX

A 15.50 15.90

B 9.90 10.20

C 4.20 4.50

D 0.70 0.90

F 3.40 3.70

G 4.98 5.18

H 2 68 2.90

J 0.44 0.60

K 13.00 13.40

L 1.10 1.45

Q 2.70 2.90

R 2.30 2.70

S 1.29 1,35

U 6.45 6.65

V 8.66 8.86

NJ Sonii-C'oiKluctors reserves the right to ehange test conditions, parameter limits and paeknge dimensions\\ithout

noiice. Inrbrmjition furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. llo\\c\cr. NJ Semi-Conduetcirs assumes no responsibility for any errors or omissions discovered in its use.

N I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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