2SB762 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

2SB762

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0

VcE(sat) Collector-Emitter Saturation Voltage |c= -4A; IB= -0.4A

VBE(on) Base-Emitter On Voltage

lc= -3A; VCe= -4V

ICEO

Collector Cutoff Current

VCE= -30V; IB= 0

ICES

Collector Cutoff Current

VCE= -60V; VBE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

hpE-1

DC Current Gain

lc= -1A; VCE= -4V

hFE-2

DC Current Gain

lc= -3A; VCE= -4V

Switching Times

ton

Turn-On Time

toff

Turn-Off Time

Ic—4A, IBI— 'B2 —U.4A

E 1 Classifications

R

Q

P

40-90 70-150 120-250

2SB762

MIN TYP. MAX UNIT

-60

V

-1.5 V

-2.0 V

-700 M A

-400 u A

.7

mA

40

250

15

0.3

us

1.3

Ms

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