2SB1308 View Datasheet(PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

Part Name

Description

Manufacturer

2SB1308

TRANSISTOR (PNP)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SB1308

2SB1308 TRANSISTOR (PNP)

D FEATURES

Power dissipation

T PCM:

0.5

Collector current

.,L ICM:

-3

Collector-base voltage

V(BR)CBO:

-30

W (Tamb=25℃)

A

V

O Operating and storage junction temperature range

C TJ, Tstg: -55℃ to +150℃

SOT-89

1. BASE

2. COLLECTOR1

2

3. EMITTER

3

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

N Parameter

Collector-base breakdown voltage

O Collector-emitter breakdown voltage

R Emitter-base breakdown voltage

T Collector cut-off current

C Emitter cut-off current

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

Test conditions

Ic=-50µA , IE=0

IC= -1mA , IB=0

IE=-50µA, IC=0

VCB=-20 V , IE=0

VEB=-5 V , IC=0

MIN MAX UNIT

-30

V

-20

V

-6

V

-0.5

µA

-0.5

µA

E DC current gain

L Collector-emitter saturation voltage

E Transition frequency

* Measured using pulse current.

J CLASSIFICATION OF hFE

Rank

WERange

P

82-180

hFE *

VCEsat *

fT

VCE=-2V, IC= -0.5A

IC=-1.5A, IB= -0.15A

VCE= -6V, IC=-50mA

f =30MHz

82

390

-0.45

V

50

MHz

Q

120-270

R

180-390

Marking

BFP,BFQ,BFR

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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