2SB1351 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SB1351

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

2SB1351

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0

-60

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -20mA

-1.5

V

VBE(sat) Base-Emitter Saturation Voltage

ICBO

Collector Cutoff Current

IC= -10A; IB= -20mA

VCB= -60V; IE=0

-2.0

V

-10

μA

IEBO

Emitter Cutoff Current

VEB= -6V; IC=0

-10

mA

hFE

DC Current Gain

IC= -10A; VCE= -4V

2000

COB

Output Capacitance

IE=0; VCB= -10V; ftest= 1.0MHz

170

pF

fT

Current-Gain—Bandwidth Product IE= 1A; VCE= -12V

130

MHz

Switching Times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= -10A; IB1= -IB2= -20mA,

VCC= -40V, RL= 4Ω

0.7

μs

1.5

μs

0.6

μs

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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