2SB1353 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB1353 Datasheet PDF : 2 Pages
| |||
Jsiisu J^zml-L-onductoi L/^ioaucti, Ona.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1353
DESCRIPTION
• Good Linearity of hFE
• Collector-Emitter Breakdown Voltage-1
: V(BR)CEo=-120V(Min)
• Complement to Type 2SD2033
APPLICATIONS
• Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
\c
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25 C
PC
Collector Power Dissipation
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-5.0
V
-1.5
A
1.8
W
20
150
'C
-55-150
r
M
• 1j
PIH:1 Emitter
2 Collector
3 Base
TO- 126 package
^B^|-F
a; o
i [T
ii
H - ^v
fT
D-»
1
,,-tf. G -*,..„.
_»!<"* If
f.
A '..
ii L
—^ [*-J
K
•*-R
1^
c D » i n'
1 > * ,i,m*
23
mm
DIM WIN MAX
A 10.70 10.95
B 7,70 7.90
c 2.60 2.80
D 0,66 0,86
F 3,10 3.30
G 4,48 4.63
H 2M 2.20
J 1,35 1.56
K 15,30 16.30
0 3,70 3,90
R
0.40 0.60
V 1.17 1.37
N.I Seini-CotKluctors reserves the right to change test conditions, parameter limits ;uicl package dimensions \\ithout
notice. Inrbnrmtion furnished by N.I Setni-Conductors is believed to he holh accurate and reliable al the time or'uoi
lo press. I lov\e\er. N.I Senii-Condiictors assumes no responsibility for any errors or omissions discovered in its use.
Nil Semi-('ondiiclors encourages ciislomcrs to verify that diilashecls are cuiTcnt bcfotv placing orders.
Quality Semi-Conductors
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