2SB1353 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

2SB1353

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwisespecified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

lc= -0.1mA; \=0

V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

lE=-0.1mA;lc=0

VcE(sat) Collector-Emitter Saturation Voltage IC=-1A;IB=-0.1A

ICBO

Collector Cutoff Current

VCB=-120V; IE=0

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

hFE

DC Current Cain

lc=-0.1A;VCE=-5V

fy

Current-Gain—Bandwidth Product

lc=-0.1A;VCE=-5V

• hFE Classifications

D

E

F

60-120 100-200 160-320

2SB1353

MIN TYP. MAX UNIT

-120

V

-120

V

-5

V

-2.0 V

-10 M A

-10 M A

60

320

50

MHz

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