2SC4672 View Datasheet(PDF) - Willas Electronic Corp.

Part Name

Description

Manufacturer

2SC4672

SOT-89 Plastic-Encapsulate Transistors

Willas Electronic Corp. 

WILLAS

SOT-89 Plastic-Encapsulate Transistors

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

Typical CharacSOteDr-1i2s3i+ticPsACKAGE

FM120-M+

2SC4672 THRU

FM1200-M+

Pb Free Produc

Static Characteristic

1.0

300

Features COMMON EMITTER

• BTaat=c25h℃process design, excellen4t.0pmoAwer dissipation offers

0.8 better reverse leakage current and thermal resistance.

•

Low

profile

surface

mounted

3.6mA

application

in

order

to

optimize board space.

3.2mA

200

•0.6 Low power loss, high efficiency. 2.8mA

• High current capability, low forwar2d.4mvAoltage drop.

PackagehFE

——

out

lICi

n

e

COMMON EMITTER

V =2V

CE

T =100℃

a

SOD-123H

T =25℃

a

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

•0.4 High surge capability.

2.0mA

• Guardring for overvoltage protection.

100

1.6mA

• Ultra high-speed switching.

0.2

1.2mA

• Silicon epitaxial planar chip, metal s0il.8icmoAn junction.

• Lead-free parts meet environmentaIl =s0t.4amnAdards of

B

0.0 MIL-STD-19500 /228

0

•0RoHS produ1ct for packin2g code suffix3"G"

4

0.1

COLLECTOR-EMITTER VOLTAGE V (V)

Halogen free product for packing codCEe suffix "H"

0.3

1

COLLECTOR CURRENT I (A)

C

0.071(1.8)

0.056(1.4)

2

Mechanical d VCEsat a—ta— IC

0.5

• Eβp=2o0xy : UL94-V0 rated flame retardant

VBEsat —— IC

1.2

0.040(1.0)

0.024(0.6)

• Case : Molded plastic, SOD-123H

0.4

1.0

,

• Terminals :Plated terminals, solderable per MIL-STD-750

Method 2026

0.3

0.8

• Polarity : Indicated by cathode band

•0.2 Mounting Position : Any

T =100℃

a

0.6

0.031(0.8) Typ.

T =25℃

a

0.031(0.8) Typ.

Dimensions in inches and (millimeters)

T =100℃

a

• Weight : Approximated 0.011 gram

T =25℃

0.1

MAXIMUM

RATINGS

a

AND

ELECTRICAL

CH0.A4 RACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single0.p00h.1ase half wave, 600.H3 z, resistive of indu1ctive load. 2

0.2

0.1

For capacitive load, dCeOraLLteECcTuOrRreCnURt RbEyN2T0%IC (A)

0.3

1

COLLECTOR CURRENT I (A)

C

β=20

2

RATINIGC S —— VBE

Marking2CodCeOMMON EMITTER

Maximum RVeCcEu=2rVrent Peak Reverse Voltage

Maximum1 RMS Voltage

Maximum DC Blocking Voltage

SYMBOL FM120-MH FM130-MH FM140-MH FCMob1/5C0i-bMH—FM—160V-MCBH/ VFEMB 180-MH FM1100-MH FM1150-MH FM1200-MH

1000

12

13

14

15

16

18 f=1MHz10

115 120

VRRM

20

30

40

50

60

C

VRMS

14

21

28

35

ib 42

80 IE=0/IC=1000

T =25℃

56 a 70

150

200

105

140

VDC

20

10030

40

50

60

80

100

150

200

Maximum Average ForwarTd =R10e0c℃tified Current

IO

a

T =25℃

Peak Forward Surge Current 8.3 ms single haalf sine-wave IFSM

superim0p.3osed on rated load (JEDEC method)

10

C 1.0

ob

30

Typical Thermal Resistance (Note 2)

RΘJA

40

Typical Junction Capacitance (Note 1)

Operating Temperature Range

CJ

TJ

-55 to +125

120

-55 to +150

Storage0.1T0.e2 mperatur0e.4 Range 0.6

0.8

1.0 TSTG1.2

1

0.1

0.3

- 65 to +175

1

3

10

20

BASE-EMMITER VOLTAGE V (V)

BE

CHARACTERISTICS

Maximu60m0 Forward Voltage at P1C.0A—D—C Ta

REVERSE VOLTAGE V (V)

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

VF

0.50

0.70

0.85

0.9

0.92

Maximum Average Reverse Current at @T A=25℃

IR

0.5

Rated D50C0 Blocking Voltage

@T A=125℃

10

NOTES4: 00

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Therm30a0 l Resistance From Junction to Ambient

200

100

0

0

25

50

75

100

125

150

2012-06

AMBIENT TEMPERATURE T (℃)

a

2012-0

WILLAS ELECTRONIC CORP

WILLAS ELECTRONIC CORP.

Share Link: