2SC5246 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SC5246

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC5246

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Note: Marking is “ZC–”.

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

15

V

8

V

1.5

V

20

mA

80

mW

150

°C

–55 to +150

°C

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

Electrical Characteristics (Ta = 25°C)

Item

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Symbol Min

I CBO

—

I CEO

—

I EBO

—

hFE

50

Cob

—

Gain bandwidth product

Power gain

fT

9

PG

14

Noise figure

NF

—

Typ Max Unit

—

10

µA

—

1

mA

—

10

µA

100 160

0.3 0.8 pF

12

—

16.5 —

GHz

dB

1.6 2.5 dB

Test conditions

VCB = 15 V, IE = 0

VCE = 8 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 10 mA

VCB = 5 V, IE = 0,

f = 1 MHz

VCE = 5 V, IC = 5 mA

VCE = 5 V, IC = 10 mA,

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

2

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