2SC4883 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC4883 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4883
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10mA; IB= 0
150
V
VcE(sat) Collector-Emitter Saturation Voltage lc= 0.7A; IB= 70mA
ICBO
Collector Cutoff Current
VCB=150V;le=0
1.0
V
10
uA
IEBO
Emitter Cutoff Current
VEB= 6V; lc= 0
10
uA
hFE
DC Current Gain
lc=0.7A; VCE=10V
60
240
fi
Current-Gain—Bandwidth Product
IE=-0.7A;VCE=12V
120
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; f,est= 1.0MHz
30
pF
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 1A;lBi=-lB2=-0.1A;
RL=20fi;Vco=20V
0.5
us
1.5
us
0.5
us
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