2SD814A-S View Datasheet(PDF) - KEXIN Industrial

Part Name

Description

Manufacturer

2SD814A-S

NPN Transistors

KEXIN Industrial 

SMD Type

NPN Transistors

2SD814A

Transistors

■ Features

● High collector to emitter voltage VCEO.

● Low noise voltage NV..

● Complimentary to 2SB792A

SOT-23

2.9 +0.1

-0.1

0.4 +0.1

-0.1

3

1

2

0.95 +0.1

-0.1

1.9 +0.1

-0.1

Unit: mm

0.1 +0.05

-0.01

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Symbol

Rating

Unit

VCBO

185

VCEO

185

V

VEBO

5

IC

50

mA

Icp

100

PC

200

mW

TJ

150

℃

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Noise voltage

Collector output capacitance

Transition frequency

Symbol

Test Conditions

VCBO Ic= 100 μA， IE= 0

VCEO Ic= 1 mA， IB= 0

VEBO IE= 100μA， IC= 0

ICBO VCB= 120 V , IE= 0

IEBO VEB= 4V , IC=0

VCE(sat) IC=30 mA, IB=3mA

VBE(sat) IC=30 mA, IB=3mA

hFE VCE= 5V, IC= 10mA

NV

VCE = 10V, IC = 1mA, GV = 80dB

Rg = 100kW, Function = FLAT

Cob VCB= 10V, IE= 0,f=1MHz

fT VCE= 10V, IE= -10mA,f=200MHz

■ Classification of hfe

Type

Range

Marking

2SD814A-Q

90-155

LQ

2SD814A-R

130-220

LR

2SD814A-S

185-330

LS

1.Base

2.Emitter

3.collector

Min Typ Max Unit

185

185

V

5

100

nA

100

1

V

1.2

90

330

150

mV

2.3

pF

150

MHz

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