2SD1824(2003) View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SD1824 Datasheet PDF : 4 Pages
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Transistors
2SD1824
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• High emitter-base voltage (Collector open) VEBO
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
100
V
Collector-emitter voltage (Base open) VCEO
100
V
Emitter-base voltage (Collector open) VEBO
15
V
Collector current
IC
20
mA
Peak collector current
ICP
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
Marking symbol: 1V
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
100
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
100
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
15
Collector-base cutoff current (Emitter open) ICBO VCB = 60 V, IE = 0
Collector-emitter cutoff current (Base open) ICEO VCE = 60 V, IB = 0
Forward current transfer ratio *
hFE VCE = 10 V, IC = 2 mA
400
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
0.1
1
1 200
0.05 0.20
90
V
V
V
µA
µA
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE
400 to 800 600 to 1 200
Publication date: April 2003
SJC00230BED
1
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