2SD1824G View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SD1824G Datasheet PDF : 4 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1824G
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• High forward current transfer ratio hFE
/ • Low collector-emitter saturation voltage VCE(sat)
• High emitter-base voltage (Collector open) VEBO
e • S-Mini type package, allowing downsizing of the equipment
. and automatic insertion through the tape packing and the maga-
c ge zine packing.
n d cle sta ■ Absolute Maximum Ratings Ta = 25°C
a e cy Parameter
Symbol Rating
Unit
t life Collector-base voltage (Emitter open) VCBO
100
V
n u uc Collector-emitter voltage (Base open) VCEO
100
V
rod Emitter-base voltage (Collector open) VEBO
15
V
te tin r P Collectorcurrent
IC
20
mA
g fou e . Peak collector current
ICP
50
mA
win typ tion Collector power dissipation
PC
150
mW
in n follo nce e d a Junction temperature
Tj
150
°C
es tena typ type form / Storage temperature
Tstg −55 to +150 °C
■ Package
• Code
SMini3-F2
• Marking Symbol: 1V
• Pin Name
1: Base
2: Emitter
3: Collector
Ma isctoinued inlcalnuedd maaiinntenanccoentinueedd typeut latesticin.co.jp/en ■ Electrical Characteristics Ta = 25°C ± 3°C
p m dis tinu abo son Parameter
Symbol
Conditions
Min
iscon ned con RL ana Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
100
/D pla dis g U n.p Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
100
e in ico Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
15
Danc llow em Collector-base cutoff current (Emitter open) ICBO VCB = 60 V, IE = 0
ten fo .s Collector-emitter cutoff current (Base open) ICEO VCE = 60 V, IB = 0
in isit ww Forward current transfer ratio *
hFE VCE = 10 V, IC = 2 mA
400
Ma e v ://w Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
Pleas http Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
Typ Max
0.1
1
1 200
0.05 0.20
90
Unit
V
V
V
µA
µA
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE
400 to 800 600 to 1 200
Publication date: May 2007
SJC00376AED
1
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