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2SK3796-2-TL-E View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
2SK3796-2-TL-E
ON-Semiconductor
ON Semiconductor ON-Semiconductor
2SK3796-2-TL-E Datasheet PDF : 4 Pages
1 2 3 4
2SK3796
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-State Resistance
V(BR)GDS
IGSS
VGS(off)
IDSS
| yfs |
Ciss
Crss
RDS(on)
IG=--10mA, VDS=0V
VGS=--20V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, VGS=0V
VDS=10V, VGS=0V, f=1kHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10mV, VGS=10V
Ratings
Unit
min
typ
max
--30
V
--1.0
nA
--0.18
--0.95
--2.2
V
0.6*
3.0* mA
3.0
6.5
mS
4
pF
1.1
pF
200
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
* : The 2SK3796 is classified by IDSS as follows : (unit : mA)
Rank
2
3
IDSS
0.6 to 1.5
1.2 to 3.0
Ordering Information
Device
2SK3796-2-TL-E
2SK3796-3-TL-E
Package
SMCP
SMCP
Shipping
3,000pcs./reel
3,000pcs./reel
memo
Pb Free
5.0
ID -- VDS
4.0
3.0
VGS=0V
2.0
--0.1V
--0.2V
1.0
--0.3V
--0.4V
00
1.0
2.0
3.0
4.0
5.0
Drain-to-Source Voltage, VDS -- V ITR00633
ID -- VGS
8
VDS=10V
6
4
--1.50
3.0mA
2
--1.25
--1.00
--0.75
--0.50
1.0mA
--0.25
00
Gate-to-Source Voltage, VGS -- V HD00635
5
ID -- VDS
4
VGS=0V
3
--0.1V
2
--0.2V
1
--0.3V
--0.4V
00
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V ITR00634
ID -- VGS
VDS=10V 5
4
3
2
75°C
1
25°C
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
00
Gate-to-Source Voltage, VGS -- V ITR00636
No.8636-2/4

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