2SK3752-01R View Datasheet(PDF) - Fuji Electric
Part Name
Description
Manufacturer
2SK3752-01R Datasheet PDF : 4 Pages
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2SK3752-01R
Characteristics
100
90
80
70
60
50
40
30
20
10
0
0
Allowable Power Dissipation
PD=f(Tc)
25
50
75
100
125
150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
1.0
0.9
VGS=6.5V
0.8
7.0V
7.5V
0.7
0.6
0.5
8V
10V
20V
0.4
0.3
0.2
0.1
0.0
0
5
10
15
20
25
30
ID [A]
FUJI POWER MOSFET
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
20V
10V
8V
7.5V
7.0V
VGS=6.5V
2 4 6 8 10 12 14 16 18 20 22
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
0.1
1
10
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=7A,VGS=10V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
max.
0.5
typ.
0.4
0.3
0.2
0.1
0.0
-50 -25 0
25 50 75
Tch [°C]
100 125 150
2
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