2SK3752-01R View Datasheet(PDF) - Fuji Electric
Part Name
Description
Manufacturer
2SK3752-01R Datasheet PDF : 4 Pages
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2SK3752-01R
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
7.0
6.5
6.0
5.5
max.
5.0
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0
25 50 75
Tch [°C]
100 125 150
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10n
24
22
20
18
16
14
12
10
8
6
4
2
0
0
Typical Gate Charge Characteristics
VGS=f(Qg):ID=14A,Tch=25 °C
Vcc= 100V
250V
400V
10
20
30
40
50
60
70
80
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
100
Ciss
1n
10
100p
10p
Coss
1
Crss
1p
10-1
100
101
102
103
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
102
tr
td(off)
td(on)
101
tf
100
100
101
ID [A]
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
Maximum Avalanche Energy vs. starting Tch
E =f(starting Tch):Vcc=50V
AS
500
450 I =7A
AS
400
350
300
I =10A
AS
250
200
I =16A
150 AS
100
50
0
0
25
50
75
100
125
150
starting Tch [°C]
3
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