2SK954 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SK954 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK954
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 10mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=1.5A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=800V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=2.1A;
RL=50Ω
VSD
Diode Forward Voltage
IF=3A; VGS=0
MIN TYP. MAX UNIT
800
V
2.1
3.0
4.0
V
3.0 4.0
Ω
±100
nA
500
uA
60
90
ns
210 340
ns
1.00 1.35
V
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