THDT58S View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
THDT58S Datasheet PDF : 7 Pages
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THDT58S / THDT58S1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
IPP
ITSM
dV/dt
Tstg
Tj
TL
Parameter
Peak pulse current (see note 1)
10/1000 µs
8/20 µs
2/10 µs
Non repetitive surge peak on-state
current (F = 50Hz)
t = 20 ms
Critical rate of rise of off-state
voltage
67% VBR
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering
during 10s
THDT58S1 THDT58S Unit
35
75
A
70
150
80
20
30
A
5
kV/µs
-55 to +150 -40 to +150 °C
+150
+150
°C
260
260
°C
Note 1 : Pulse waveform :
10/1000µs
5/310µs
2/10µs
tr=10µs
tr=5µs
tr=2µs
tp=1000µs
tp=310µs
tp=10µs
THERMAL RESISTANCES
Symbol
Rth (j-a) Junction to ambient
Parameter
% I PP
100
50
0
tr
tp
Value
80
t
Unit
°C/W
2/7
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