THDT6511D View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
THDT6511D Datasheet PDF : 6 Pages
| |||
THDT6511D
1 - PARAMETERS RELATED TO DIODE LINE / GND
Symbol
Test conditions
VF
IF = 1 A
tp = 100 µs
VFP
see curve fig. 1
NA : Non Available
Min. Typ. Max. Unit
2
V
NA
NA
NA
V
2 - PARAMETERS RELATED TO PROTECTION THYRISTOR
Symbol
Tests conditions
Min. Typ. Max. Unit
VBR
IR = 1mA
65
V
VBO
68
85
V
IRM
t(s) IBO
c IBO
rodu IH
P αT
te C
Obsolete Product(s) - Obsole dV/dt
VRM = 63 V
tp = 100 µs
F = 50 Hz
RG = 600 Ω
VD = 100 mVRMS
F = 1KHz
Linear ramp up to 67 % of VBR
100
µA
110
450
mA
500
mA
150
15
mA
10-4/°C
500
pF
5
kV / µs
3/6
Share Link: 