UF1600CT View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.

Part Name

Description

Manufacturer

UF1600CT

16Ampere Heat Sink Dual Common Cathode High Efficiency Rectifiers

Thinki Semiconductor Co., Ltd. 

UF1600CT thru UF1608CT

Pb Free Plating Product

UF1600CT thru UF1608CT

Pb

16Ampere Heat Sink Dual Common Cathode High Efficiency Rectifiers

Features

Fast switching for high efficiency

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

Case: Heatsink TO-220AB open metal package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.0 gram approximately

TO-220AB/TO-220-3L

.419(10.66)

.387(9.85)

.139(3.55)

MIN

Unit : inch (mm)

.196(5.00)

.163(4.16)

.054(1.39)

.045(1.15)

.038(0.96)

.019(0.50)

.1(2.54)

.1(2.54)

.025(0.65)MAX

Case

Case

Case

Case

Positive

Common Cathode

Suffix "CT"

Negative

Common Anode

Suffix "N"

Doubler

Tandem Polarity

Suffix "D"

Series

Tandem Polarity

Suffix "E"

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol UF1600CT UF1601CT UF1602CT UF1603CT UF1604CT UF1606CT UF1608CT Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

VRRM

VRWM

50

VR

VR(RMS)

35

100 200 300 400 600 800 V

70

140 210 280 420 560 V

Average Rectified Output Current @TC = 105°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

Forward Voltage

Peak Reverse Current

At Rated DC Blocking Voltage

Reverse Recovery Time (Note 1)

@IF = 8.0A

@TA = 25°C

@TA = 125°C

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

IO

IFSM

VFM

IRM

trr

Cj

Tj, TSTG

16

125

1.0

1.3

10

500

50

80

-65 to +150

A

A

1.7

V

µA

100

nS

50

pF

°C

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Rev.09T

© 1995 Thinki Semiconductor Co., Ltd.

Page 1/2

http://www.thinkisemi.com.tw/

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