IS63LV1024L-10B View Datasheet(PDF) - Integrated Silicon Solution
Part Name
Description
Manufacturer
IS63LV1024L-10B
Integrated Silicon Solution
IS63LV1024L-10B Datasheet PDF : 9 Pages
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IS63LV1024L
ISSI ®
TRUTH TABLE
Mode
WE
CE
OE
Not Selected
(Power-down)
X
H
X
Output Disabled
H
L
H
Read
H
L
L
Write
L
L
X
I/O Operation
High-Z
High-Z
DOUT
DIN
Vcc Current
ISB1, ISB2
ICC1, ICC2
ICC1, ICC2
ICC1, ICC2
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
TBIAS
TSTG
PT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
Unit
–0.5 to Vcc + 0.5 V
–55 to +125
°C
–65 to +150
°C
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VCC
3.3V ± 0.3V
3.3V ± 0.15V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage(1)
ILI
Input Leakage
Test Conditions
VCC = Min., IOH = –4.0 mA
VCC = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VCC
ILO
Output Leakage
GND ≤ VOUT ≤ VCC, Outputs Disabled
Notes:
1. VIL = –3.0V for pulse width less than 10 ns.
Com.
Ind.
Com.
Ind.
Min.
2.4
—
2.2
–0.3
–1
–5
–1
–5
Max.
—
0.4
VCC + 0.3
0.8
1
5
1
5
Unit
V
V
V
V
µA
µA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. B
08/07/02
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