IS63LV1024L-10JI View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS63LV1024L-10JI

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

Integrated Silicon Solution 

IS63LV1024L

ISSI ®

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol Parameter

ICC1 Vcc Operating

Supply Current

ISB

TTL Standby

Current

(TTL Inputs)

ISB1 TTL Standby

Current

(TTL Inputs)

ISB2 CMOS Standby

Current

Test Conditions

VCC = Max., CE = VIL

IOUT = 0 mA, f = Max.

VCC = Max.,

VIN = VIH or VIL

CE ≥ VIH, f = Max

VCC = Max.,

VIN = VIH or VIL

CE ≥ VIH, f = 0

VCC = Max.,

CE ≤ VCC – 0.2V,

Com.

Ind.

Com.

Ind.

Com.

Ind.

Com.

Ind.

-8 ns

Min. Max.

— 100

— 110

— 35

— 40

— 15

— 20

—1

— 1.5

-10 ns

Min. Max.

— 95

— 105

— 30

— 35

— 15

— 20

—1

— 1.5

-12 ns

Min. Max. Unit

— 90 mA

— 100

— 25 mA

— 30

— 15 mA

— 20

— 1 mA

— 1.5

(CMOS Inputs)

VIN ≥ VCC – 0.2V, or

VIN ≤ 0.2V, f = 0

Notes:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

CAPACITANCE(1,2)

Symbol Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

CI/O

Input/Output Capacitance

VOUT = 0V

6

pF

8

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.

4

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

08/07/02

Share Link: