ATF-44101 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
Manufacturer
ATF-44101 Datasheet PDF : 3 Pages
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ATF-44101 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature
Units
V
V
V
mA
W
°C
°C
Absolute
Maximum[1]
+14
-7
-16
IDSS
6.5
175
-65 to +175
Thermal Resistance:
Liquid Crystal Measurement:
θjc = 23°C/W; TCH = 150°C
1␣ µm Spot Size[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 43 mW/°C for
TCASE > 25°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-44101 Typical Performance, TA = 25°C
33
16
35
30
32
P1 dB
12
25
20
40
31
8
G1 dB
15
30
30
4
10
20
5
10
29
2.0
0
4.0
6.0 8.0
FREQUENCY (GHz)
Figure 1. Power Output @ 1 dB Gain
Compression and 1 dB Compressed
Gain vs. Frequency.
VDS = 9V, IDS = 500 mA.
0
0
0 5 10 15 20 25 30
PIN (dBm)
Figure 2. Output Power and Power
Added Efficiency vs. Input Power.
VDS = 9 V, IDS = 500 mA, f = 4 GHz.
25
20
15
MSG
10
5
|S21|2
0
1.0
2.0
4.0 6.0 8.0 12.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 9 V, IDS = 500 mA.
5-90
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