MMBT3904TT1 View Datasheet(PDF) - Willas Electronic Corp.
Part Name
Description
Manufacturer
MMBT3904TT1 Datasheet PDF : 7 Pages
| |||
WILLAS
FM120-M
MMBT3904TT1THRU
1.0GA SeUnRFeACraE Ml POUuNTrpSCoHOsTeTKTYrBaARnRsIEiRsRtEoCrTsIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
Package outline
• Batch process design, excellent power dissipation offers
ELECbTeRttIeCrAreLvCeHrsAeRleAaCkaTgEeRcIuSrTreICntSa(nTdAt=he25rm°Caul rnelessistoatnhceerw. ise noted) (Continued)
• Low profile surCfahcaeramcoteurnistteicd application in order to
Symbol
Min
ON C• HLoopAwtRimpAiozCweTebEroRlaoIrsSdsT,sIhpCiagSche(e.3f)ficiency.
D• CHiCguhrrceunrtrGenaitnc(1a)pability, low forward voltage drop.
hFE
(•I CH=ig0h.1smuArgdec,cVapCaE =b1il.i0tyV. dc)
40
(•I CG=ua1.r0drminAgdcfo, rVoCvEe=rv1o.0ltVagdce)protection.
70
SOD-123H
Max
0.146(3.7)
0.130(3.3)
––
––
Unit
–– 0.012(0.3) Typ.
(•I CU=ltr1a0hmigAhd-cs,pVeCeEd=s1w.0itcVhdicn)g.
(•I CS=ili5c0omn Aedpcit,aVxiCaEl=p1la.0nVadrcc)hip, metal silicon junction.
100
300
60
––
0.071(1.8)
0.056(1.4)
(•I CL=ea1d0-0fmreAedpca, VrtsCEm=e1e.0t Vendcv)ironmental standards of
CoMlleILct-oSrT–EDm-1it9te5r0S0a/tu2r2a8tion Voltage
(•I RHC =oaHl1oS0gempnrAofrddeuce,cItpBfroo=rd1pu.ac0ct mkfoinArgdpcac)oc(kd3ie)ngsucfofidxe"Gsu"ffix "H"
(MI C e= 5c0hmaAndci, cI Ba=l5.d0maAtdac)
Base–Emitter Saturation Voltage(3)
(•I CE=po1x0ym:AUdLc9, 4I -BV=01r.0amteAddfcla) me retardant
VCE(sat)
V BE(sat)
30
––
––
0.65
––
0.2
0.3
0.85
Vdc
Vdc 0.040(1.0)
0.024(0.6)
(•I CC=as5e0m: MAdocl,dIeBd=p5la.0smtiAc,dSc O) D-123H
,
SMA•LTLe–rmSIiGnaNlsA:LPlCaHteAdRteArmCTinEaRlsI,SsToIlCdeSrable per MIL-STD-750
–– 0.031(0.8) Typ.
0.95
0.031(0.8) Typ.
Current–Gain —MeBthanoddw2id0t2h6Product
(•I CP=ol1a0rmityA:dIcn, dVicCaE=te2d0bVydcc,aft=ho1d0e0MbaHnzd)
fT
20D0imensions in in–c–hes and (millMimHetzers)
O• uMtpouutnCtainpgacPitoasnicteion : Any
(•VWCBe=ig5h.t0:VAdpc,pIroE x=im0,af t=ed1.00.M01H1zg) ram
C obo
––
4.0
pF
Input Capacitance
(V BE = 0.5MVAdcX, IIMC =U0M, f
=R1A.0TMINHGz)S
AND
ELECTRICAL
CHARACCibTo ERISTICS––
8.0
pF
RatingsInaptu2t5Im℃peadmanbcieent temperature unless otherwise specified.
Single p(VhaCsEe= h1a0lVf dwca,vIeC,=601H.0zm, Aredscis, tfiv=e1o.0f inkHduzc) tive load.
h ie
1.0
10
pF
For capVaocltitaivgee lFoeaedd, bdaecraktRe actuiorrent by 20%
(V CE = 10 Vdc,RI AC T=IN1.G0SmAdc, f = 1.0 kHz)
h re
0.5
8.0
X10 –4
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
MarkingSCmodaell–Signal Current Gain
12
Maximum(VRCeEc=u1rr0enVtdPce,aIkCR=e1v.e0rsmeAVdoclt,afg=e 1.0 kHz) VRRM
20
13 h fe 14
30
40
15100
50
16 400 18
60
80
—10
100
115 120
150
200
Output Admittance
Maximum(VRCME =S1V0olVtadgce, I C = 1.0 mAdc, f = 1.0 kHz) VRMS
14
21 h oe 28
351.0 42 40 56 θm7h0os
105
140
MaximumNoDisCeBFliogcukrieng Voltage
VDC
20
Maximum(VACvEe=ra5g.e0 FVodrcw,aIrCd=R1e0ct0ifµieAddCcu, rRreSn=t 1.0 k Ω, f = I1O.0 kHz)
30
40
NF
50
60
80
—
1.0 5.0
100
dB
150
200
PeaSk WFoIrTwaCrdHSINurGgeCCuHrrAenRt A8.3CmTsEsRinIgSleThICalfSsine-wave IFSM
superimpDoeseladyoTnimrateed load (JEDEC metho(dV) CC = 3.0 Vdc,V BE = 0.5Vdc
td
Typical TRhiseermTaiml Reesistance (Note 2) I C = 10 mAdc, I RB1Θ=JA1.0mAdc)
tr
Typical JSutnocratiogne CTaimpaecitance (Note 1)
OperatinFgaTlleTmimpeerature Range
(V CC
I C=
= 3.0Vdc,
10 mAdc,I
CJ
BT1 =J
I
B2
=
-55
1.0mAdc)
to
+12t 5s
tf
Storage Temperature Range
TSTG
30
—
35
—
40 35
ns
—
120200
—
50
-55 tons+150
- 65 to +175
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
0.5
Rated DC Blocking Voltage
@T A=125℃
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-112012-06
WILLASWEILLELCATSREOLNECICTRCOONRIPC.COR
Share Link: 