EMA303D-1 View Datasheet(PDF) - Excelics Semiconductor, Inc.
Part Name
Description
Manufacturer
EMA303D-1 Datasheet PDF : 4 Pages
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Excelics
DATA SHEET
17.5 - 26 GHz Medium Power MMIC
FEATURES
• 17.5 -26 GHz BANDWIDTH
• +22 dBm OUTPUT POWER @1dB Gain Compression
• 22 dB TYPICAL SMALL SIGNAL GAIN
• DUAL BIAS SUPPLY
• 0.3 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS1 (Ta = 25 OC)
SYMBOL
PARAMETERS/TEST CONDITIONS
F
Operating Frequency Range
P1dB
Ouput Power at 1dB Gain Compression
@ Vdd=8V ; Id= 0.5 Idss
@ Vdd=6V ; Id= 0.5 Idss
Gss
Small Signal Gain @ Vdd=6V ; Id= 0.5 Idss
∆Gss
NF
Small Signal Gain Flatness
Noise Figure @ f=18GHz, Vdd=3.5V, Id=140mA
Input RL Input Return Loss
Output RL Output Return Loss
Idd
Power Supply Current
Vdd
Power Supply Voltage
EMA303D-1
Release Date: March 7, 2003
Chip Size 1060 x 2500 microns
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN TYP MAX UNIT
17.5
26 GHz
20 22
dBm
18 20
20 22
dB
± 2.5
dB
4
dB
6
dB
6
dB
140
mA
6
8
V
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
215mA
Igf
Forward Gate Current
50 mA
8.5mA
Pin
Input Power
15dBm
Tch
Channel Temperature
175oC
Tstg
Storage Temperature
-65/175oC
@3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
1W
0.85 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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