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SDC2677BEVB-2(2004) View Datasheet(PDF) - Semtech Corporation

Part Name
Description
Manufacturer
SDC2677BEVB-2 Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SC2677B
POWER MANAGEMENT
Application Information(Cont.)
1000
900
800
700
600
500
400
300
4
(R13+R19) vs.Oscillator Frequency
6 8 10 12 14 16 18 20
(R13+R19) (kohm)
Vphasing vs Phase Shift
180
160
140
120
100
80
60
40
20
0
0.55
0.60
0.65 0.70 0.75 0.80
Vphasing (V)
0.85
0.90
ICC : Supply current for controller.
QGT : Total gate charge of all selected MOSFETs.
QG : Total gate charge of per selected MOSFETs.
FSW : Switching frequency.
N : Number of MOSFET.
It is recommended that the below figure be studied to
ensure SC2677B is used under safe operating
conditions.
QGT limitation (with loading)
620
580
540
500
460
420
SOA
380
340
300
260
220
180
SOA
140
100
60
SOA
20
150 200 250 300 350 400 450 500
Fsw(KHz)
5Vin
8.5Vin
12Vin
OverCurrent Protection
Current-sense amplifiers sense the inductor DCR, and
compare with an internal OCP reference. When
overcurrent is detected, the current-sense amplifier will
trip the peak current limit on cycle-by-cycle basis. If the
overcurrent condition sustains, and the output voltage
drops below 75% of its nominal voltage level, the PWM
will be disabled and the power supply will be latched off
with a short amount of delay. The latch can be reset by
power cycling.
Controller Power Dissipation
Controller power dissipation is generated by the
following parameter; switching frequency, total gate
charge of all selected MOSFETs and supply voltage.
P = Vin * (ICC + QGT* FSW)
QGT = QG * N
Where
Vin : Supply voltage for controller and driving
MOSFET.
This example demonstrates the procedure introduced
above.
Then
Vin =12V
Fsw =250KHz
N =4(number of MOSFET)
QGT = 108nC
QG = 27nC (per MOSFET)
Layout Guidelines
Power and signal traces must be kept separate for noise
considerations. Feedback, current-sense traces and ana-
log ground should not cross any traces or planes carrying
high-switching currents, such as in the input loop or the
phase node.
The input loop, consisting of the input capacitors and
both MOSFETs must be kept as small as possible. Since
all of the high switching currents occur in the input loop,
the enclosed loop area must be kept small to minimize
inductance and radiated and conducted noise emissions.
© 2004 Semtech Corp.
8
www.semtech.com

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