TISP1072F3 View Datasheet(PDF) - Bourns, Inc

Part Name

Description

Manufacturer

TISP1072F3

DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

Bourns, Inc 

TISP1xxxF3 Overvoltage Protector Series

Description (continued)

High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially

limited by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar

holding current helps prevent d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These

protectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair.

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control

and are virtually transparent to the system in normal operation.

Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)

Rating

Symbol

Value

Unit

Repetitive peak off-state voltage, 0 °C < TA < 70 °C

‘1072F3

‘1082F3

VDRM

-58

-66

V

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

1/2 (Gas tube differential transient, 1/2 voltage wave shape)

120

2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)

80

1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor)

50

8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)

70

10/160 (FCC Part 68, 10/160 voltage wave shape)

4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)

IPPSM

60

A

55

0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)

38

5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)

50

5/320 (FCC Part 68, 9/720 voltage wave shape, single)

50

10/560 (FCC Part 68, 10/560 voltage wave shape)

45

10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)

35

Non-repetitive peak on-state current, 0 °C < TA < 70 °C (see Notes 1 and 3)

50 Hz, 1 s

ITSM

4.3

A

Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A

Junction temperature

Storage temperature range

diT/dt

TJ

Tstg

250

-65 to +150

-65 to +150

A/µs

°C

°C

NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.

2. Initially the TISP® must be in thermal equilibrium with 0 °C < TJ <70 °C. The surge may be repeated after the TISP® returns to its

initial conditions.

3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.

Electrical Characteristics for R and T Terminal Pair, TA = 25 °C (Unless Otherwise Noted)

IDRM

ID

Coff

Parameter

Repetitive peak off-

state current

Off-state current

Off-state capacitance

Test Conditions

VD = ±VDRM, 0 °C < TA < 70 °C

VD = ±50 V

f = 100 kHz,

VD = 0

(see Note 4)

Vd = 100 mV

NOTE 4: Further details on capacitance are given in the Applications Information section.

Min Typ Max Unit

±10

µA

±10

µA

0.08 0.5

pF

SEPTEMBER 1993 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

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