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TS4962MEIJT View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
TS4962MEIJT
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TS4962MEIJT Datasheet PDF : 41 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
TS4962M
Table 6. VCC = 3.6 V, GND = 0 V, VIC = 2.5 V, Tamb = 25 °C (unless otherwise specified) (1)
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
ICC
ISTBY
VOO
Supply current
Standby current (2)
Output offset voltage
Pout Output power
THD + N
Total harmonic
distortion + noise
Efficiency Efficiency
PSRR
Power supply
rejection ratio with
inputs grounded (3)
No input signal, no load
No input signal, VSTBY = GND
No input signal, RL = 8 Ω
G=6dB
THD = 1% max., F = 1 kHz, RL = 4 Ω
THD = 10% max., F = 1 kHz, RL = 4 Ω
THD = 1% max., F = 1 kHz, RL = 8 Ω
THD = 10% max., F = 1 kHz, RL = 8 Ω
Pout = 500 mWRMS,
G = 6 dB, 20 Hz < F< 20 kHz
RL = 8 Ω + 15 µH, BW < 30 kHz
Pout = 500 mWRMS, G = 6 dB, F = 1 kHz,
RL = 8 Ω + 15 µH, BW < 30 kHz
Pout = 1 WRMS, RL = 4 Ω + ≥ 15 µH
Pout =0.65 WRMS, RL = 8 Ω+ ≥ 15 µH
F = 217 Hz, RL = 8 Ω, G=6 dB,
Vripple = 200 mVpp
CMRR
Common-mode
rejection ratio
F = 217 Hz, RL = 8 Ω, G = 6 dB,
ΔVicm = 200 mVpp
Gain Gain value
Rin in kΩ
RSTBY
Internal resistance
from Standby to GND
2
2.8 mA
10 1000 nA
3
25 mV
1.15
1.51
W
0.7
0.9
1
%
0.27
78
88
%
62
dB
56
dB
2----7---3----k---Ω---
Rin
-3---0---0----k----Ω---
Rin
3----2---7----k---Ω---
Rin
V/V
273 300 327 kΩ
FPWM
SNR
tWU
tSTBY
Pulse width modulator
base frequency
Signal to noise ratio
Wake-uptime
A-weighting, Pout = 0.6 W, RL = 8 Ω
Standby time
180 250 320 kHz
83
dB
5
10 ms
5
10 ms
10/41
DocID11703 Rev 6

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